Young-Hee Kim
Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability - Synthesis Lectures on Solid State Materials and Devices Young-Hee Kim

Name: Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability - Synthesis Lectures on Solid State Materials and Devices
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Author: Young-Hee Kim

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Hf-Based High-k Dielectrics: Process Development, Performance Characterization, and Reliability - Synthesis Lectures on Solid State Materials and Devices

Young-Hee Kim

Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm).

92 pages, X, 92 p.

Medij	Knjige Paperback Book (Knjiga z mehkimi platnicami in lepljenim hrbtom)
Izdano	31. decembra 2007
ISBN13	9783031014246
Založniki	Springer International Publishing AG
Strani	92
Dimenzije	150 × 220 × 10 mm · 212 g
Jezik	Angleščina