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Handbook for III-V High Electron Mobility Transistor Technologies 1. izdaja
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Handbook for III-V High Electron Mobility Transistor Technologies
The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.
430 pages
| Medij | Knjige Paperback Book (Knjiga z mehkimi platnicami in lepljenim hrbtom) |
| Izdano | 18. decembra 2020 |
| ISBN13 | 9780367729240 |
| Založniki | Taylor & Francis Ltd |
| Strani | 444 |
| Dimenzije | 150 × 220 × 10 mm · 775 g |
| Jezik | Angleščina |
| Urednik | Ajayan, J. |
| Urednik | Nirmal, D. |
