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SiC Power Module Design: Performance, robustness and reliability - Energy Engineering Alberto Castellazzi
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SiC Power Module Design: Performance, robustness and reliability - Energy Engineering
Alberto Castellazzi
Wide Bandgap semiconductor devices offer higher efficiency, smaller size, less weight, and longer lifetime, with applications in power grid electronics and electromobility. This book describes the state of advanced packaging solutions for novel wide-band-gap semiconductors, specifically silicon carbide (SiC) MOSFETs and diodes.
360 pages
| Medij | Knjige Hardcover Book (Knjiga s trdim hrbtom in platnicami) |
| Izdano | 3. februarja 2022 |
| ISBN13 | 9781785619076 |
| Založniki | Institution of Engineering and Technolog |
| Strani | 360 |
| Dimenzije | 241 × 163 × 28 mm · 725 g |
| Jezik | Angleščina |
| Urednik | Castellazzi, Alberto (Professor, Kyoto University of Advanced Science, Japan) |
| Urednik | Irace, Andrea (Professor of Electronics, University of Naples Federico II, Italy) |
