Povej prijatelju o tem izdelku:
Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes - Synthesis Lectures on Emerging Engineering Technologies Nabil Shovon Ashraf
Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes - Synthesis Lectures on Emerging Engineering Technologies
Nabil Shovon Ashraf
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
| Medij | Knjige Hardcover Book (Knjiga s trdim hrbtom in platnicami) |
| Izdano | 27. marca 2025 |
| ISBN13 | 9783031842856 |
| Založniki | Springer International Publishing AG |
| Strani | 129 |
| Dimenzije | 174 × 249 × 14 mm · 424 g |
| Jezik | Nemščina |