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Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes - Synthesis Lectures on Emerging Engineering Technologies
Nabil Shovon Ashraf
Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes - Synthesis Lectures on Emerging Engineering Technologies
Nabil Shovon Ashraf
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy.
Media | Books Hardcover Book (Book with hard spine and cover) |
Released | March 27, 2025 |
ISBN13 | 9783031842856 |
Publishers | Springer International Publishing AG |
Pages | 129 |
Dimensions | 472 g |
Language | German |
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