Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics - Koichiro Ishibashi - Knjige - Springer-Verlag Berlin and Heidelberg Gm - 9783642270185 - 27. novembra 2013
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Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics 2011 edition

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Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.


310 pages, biography

Medij Knjige     Paperback Book   (Knjiga z mehkimi platnicami in lepljenim hrbtom)
Izdano 27. novembra 2013
ISBN13 9783642270185
Založniki Springer-Verlag Berlin and Heidelberg Gm
Strani 144
Dimenzije 155 × 235 × 8 mm   ·   226 g
Jezik Nemščina  
Urednik Ishibashi, Koichiro
Urednik Osada, Kenichi

Več od istega **izdajatelja**