Povej prijatelju o tem izdelku:
Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics Koichiro Ishibashi 2011 edition
Low Power and Reliable SRAM Memory Cell and Array Design - Springer Series in Advanced Microelectronics
Koichiro Ishibashi
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
310 pages, biography
| Medij | Knjige Paperback Book (Knjiga z mehkimi platnicami in lepljenim hrbtom) |
| Izdano | 27. novembra 2013 |
| ISBN13 | 9783642270185 |
| Založniki | Springer-Verlag Berlin and Heidelberg Gm |
| Strani | 144 |
| Dimenzije | 155 × 235 × 8 mm · 226 g |
| Jezik | Nemščina |
| Urednik | Ishibashi, Koichiro |
| Urednik | Osada, Kenichi |