Remedies of Short Channel Effects in Conventional Mosfet: a Parameter Modeling Study - Chandan Kumar Sarkar - Books - LAP LAMBERT Academic Publishing - 9783659566264 - July 1, 2014
In case cover and title do not match, the title is correct

Remedies of Short Channel Effects in Conventional Mosfet: a Parameter Modeling Study

Chandan Kumar Sarkar

Price
CA$ 50.91

Ordered from remote warehouse

Expected delivery Jul 2 - 10
Add to your iMusic wish list

Remedies of Short Channel Effects in Conventional Mosfet: a Parameter Modeling Study

MOSFETs are scaled primarily due to increased packing density and speed. Due to scaling some drawbacks are found in conventional MOSFET. They are mobility degradation and surface scattering, velocity saturation in MOSFET, avalanche breakdown, hot electron effect, drain induced barrier lowering(DIBL), reduction of threshold voltage, punch through. These drawbacks are known as Short Channel Effect(SCE). The model of double halo dual material gate combines the advantages of both the channel engineering (halo) and the gate engineering techniques (dual-material gate) to effectively suppress the short-channel effects (SCEs). The model is derived using the pseudo-2D analysis by applying the Gauss's law to an elementary rectangular box in the channel depletion region, considering the surface potential variation with the channel depletion layer depth.

Media Books     Paperback Book   (Book with soft cover and glued back)
Released July 1, 2014
ISBN13 9783659566264
Publishers LAP LAMBERT Academic Publishing
Pages 76
Dimensions 152 × 229 × 5 mm   ·   131 g
Language German