Stability of Igzo-based Thin-film Transistor: Stability and Temperature-dependence Assessment of Igzo Tfts - John Wager - Books - LAP LAMBERT Academic Publishing - 9783838399638 - September 7, 2010
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Stability of Igzo-based Thin-film Transistor: Stability and Temperature-dependence Assessment of Igzo Tfts

John Wager

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Stability of Igzo-based Thin-film Transistor: Stability and Temperature-dependence Assessment of Igzo Tfts

Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this book is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO- based TFTs processed at temperatures between 200 °C and 300 °C.

Media Books     Paperback Book   (Book with soft cover and glued back)
Released September 7, 2010
ISBN13 9783838399638
Publishers LAP LAMBERT Academic Publishing
Pages 152
Dimensions 225 × 9 × 150 mm   ·   231 g
Language English  

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