Povej prijatelju o tem izdelku:
Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics Second Edition 2020 edition
Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics
425 pages, 183 Illustrations, color; 130 Illustrations, black and white; XIV, 425 p. 313 illus., 183
| Medij | Knjige Paperback Book (Knjiga z mehkimi platnicami in lepljenim hrbtom) |
| Izdano | 24. marca 2021 |
| ISBN13 | 9789811512148 |
| Založniki | Springer Verlag, Singapore |
| Strani | 425 |
| Dimenzije | 150 × 220 × 10 mm · 612 g |
| Urednik | Ishiwara, Hiroshi |
| Urednik | Okuyama, Masanori |
| Urednik | Park, Byung-Eun |
| Urednik | Sakai, Shigeki |
| Urednik | Yoon, Sung-Min |